Microchip construction for Seebeck-effect measurements on bismuth nanowires

The characterization of thermoelectric properties of nanoscale materials is a current topic of intensive research. Especially bismuth nanowires are very attractive because of their extraordinary properties and possible applications in thermoelectric devices. For the calculation of the thermoelectric figure of merit z = α2σ/λ, the Seebeck coefficient α, the electrical conductivity σ and the thermal conductivity λ of the nanowires has to be determined. The bismuth nanowires under study are fabricated by the template method [1]. Their typical length is in the range of 10 to 20 μm. For the measurement of the Seebeck effect, a temperature difference must be established along the wire axis. For this purpose, a microchip has been designed which is presented in Fig. 1 [2].